PART |
Description |
Maker |
MBR24040 |
240 A, 40 V, SILICON, RECTIFIER DIODE
|
MICROSEMI CORP-SCOTTSDALE
|
SDR2UF1.8SMS SDR2UF1.81 SDR2UF2.0SMS |
2 AMPS 1800 - 2000 VOLTS 70 nsec ULTRA FAST RECOVERY RECTIFIER 2 A, 1800 V, SILICON, RECTIFIER DIODE 2 AMPS 1800 - 2000 VOLTS 70 nsec ULTRA FAST RECOVERY RECTIFIER 2 A, 2000 V, SILICON, RECTIFIER DIODE
|
Solid State Devices, Inc. Solid States Devices, Inc
|
GP02-20 |
0.25 A, 2000 V, SILICON, SIGNAL DIODE, DO-204AL
|
|
2SB892-R 2SD1207-S 2SD1207S |
2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR PNP / NPN Epitaxial Planar Silicon Transistors
|
SANYO SEMICONDUCTOR CO LTD ON Semiconductor
|
VUO52-20NO1 |
3 PHASE, 54 A, 2000 V, SILICON, BRIDGE RECTIFIER DIODE MODULE-7
|
IXYS, Corp.
|
CR250-3 |
HIGH VOLTAGE SILICON RECTIFER 2000 THRU 4000 VOLTS 200mA
|
Central Semiconductor C...
|
AP77016-B04 |
uSAP77016-B04 G.723.1 Audio CODEC Middleware | User's Manual[10/2000] uSAP77016B04 g.723.1使用音频CODEC中间件|用户手册[10/2000]
|
Glenair, Inc.
|
ER1ZZ ER1Q ER1V ER1Y ER1Z |
1 Amp Super Fast Recovery Silicon Rectifier 1200 to 2000 Volts
|
MCC[Micro Commercial Components]
|
2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor 25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz BJT 2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology Microsemi, Corp.
|
|